K4B2G1646F-BYMA
产品概述
图片仅供参考
| 制造商IC编号 | K4B2G1646F-BYMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 128MX16 DDR3L |
| 共通IC编号 | K4B2G1646F BYMA |
| K4B2G1646F-BYMA0 | |
| K4B2G1646F-BYMA000 | |
| K4B2G1646F-BYMA000/0CV | |
| K4B2G1646F-BYMA00P | |
| K4B2G1646F-BYMA0CV | |
| K4B2G1646F-BYMA0EC | |
| K4B2G1646F-BYMAT00 | |
| K4B2G1646F-BYMATCV | |
| K4B2G1646F-BYMATEC | |
| K4B2G1646F-BYMATSG |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | 1120 |
| 标准外箱 | |
| Number Of Words | 128M |
| Bit Organization | x16 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 7th Generation |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B2G1646F-BYMA | 22,400 | 索取报价 | |
| K4B2G1646F-BYMA | 5,600 | 索取报价 | |
| K4B2G1646F-BYMA | 8,960 | 2025+ | 索取报价 |
| K4B2G1646F-BYMA | 3,000 | 2023+ | 索取报价 |
| K4B2G1646F-BYMA | 22,400 | DC2330+ | 索取报价 |
| K4B2G1646F-BYMA | 10,000 | 2023+ | 索取报价 |
| K4B2G1646F-BYMA | 4,280 | 23+ | 索取报价 |
| K4B2G1646F-BYMA | 11,200 | 2023+ | 索取报价 |
| K4B2G1646F-BYMA | 11,200 | 索取报价 | |
| K4B2G1646F-BYMA | 0 | 23 | 索取报价 |
可替代IC编号
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT41K128M16JT-107:K | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6HD16EWBH-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| EM6HD16EWBH-10H(TRAY) | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| F60C1A0002-M6AR | FBGA-96 | 1.35 V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63DFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63FFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63GFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63GFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63GFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16128BL-107MB | FBGA-96 | 1.35 V | 1866 MBPS | 0 C~+85 C |
| IS43TR16128BL-107MBL | FBGA-96 | 1.35 V | 1866 MBPS | 0 C~+85 C |