图片仅供参考
制造商IC编号 | K4B4G0846Q-BYK0 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 512MX8 DDR3L |
脚位/封装 | FBGA-78 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | 0 C~+85 C |
速度 | 1600 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT41K512M8RH-125 V:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125: | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:D | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E (2K/REEL) | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E 3.45 | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E TR | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E(DC 1320) | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:ETR | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:ETR(10) | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |