图片仅供参考
制造商IC编号 | K4B4G0846Q-HYK |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 512MX8 DDR3L |
共通IC编号 | K4B4G0846Q-HYK0 |
K4B4G0846Q-HYK00 | |
K4B4G0846Q-HYK000 | |
K4B4G0846Q-HYK0000 |
脚位/封装 | FBGA-78 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | 0 C~+85 C |
速度 | 1600 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B4G0846Q-HYK0 | 184 | 14+ | 索取报价 |
K4B4G0846Q-HYK0 | 316 | 17+ | 索取报价 |
K4B4G0846Q-HYK0 | 3,840 | 索取报价 | |
K4B4G0846Q-HYK0 | 0 | 索取报价 | |
K4B4G0846Q-HYK0 | 3,840 | DC16+ | 索取报价 |
K4B4G0846Q-HYK0 | 6,400 | 15+ | 索取报价 |
K4B4G0846Q-HYK0 | 7,680 | 索取报价 | |
K4B4G0846Q-HYK0 | 20,000 | 索取报价 | |
K4B4G0846Q-HYK0 | 10,240 | 16+ | 索取报价 |
K4B4G0846Q-HYK0 | 30,720 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT41K512M8RH-125 K:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125 M ES:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125 M ES:J | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125 M:J | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125 S:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125 V:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125: | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:D | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K512M8RH-125:E (2K/REEL) | FBGA-78 | 1.35V | 1600 MBPS | 0 C~+85 C |