K4B4G0846Q-HYKO 3.84

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4B4G0846Q-HYKO 3.84
厂牌 SAMSUNG/三星
IC 类别 DDR3L SDRAM
IC代码 512MX8 DDR3L

产品详情

脚位/封装 FBGA-78
外包装
无铅/环保 无铅/环保
电压(伏) 1.35 V
温度规格 0 C~+85 C
速度 1600 MBPS
标准包装数量
标准外箱
Number Of Words 512M
Bit Organization x8
Density 4G
Internal Banks 8 Banks
Power Low VDD(1.35V)
Generation 17th Generation

供应链有货

IC 编号 数量 生产年份
K4B4G0846Q-HYKO 3.84 0 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
H5TC4G83AFR-PBA FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83AFR-PBA, 1.35V FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83AFR-PBAR FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83AFR-PBC FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83BFR-PBA FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83BFR-PBA 1.35V FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83BFR-PBA D3 512 FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83BFR-PBA/PBC FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83BFR-PBAR FBGA-78 1.35V 1600 MBPS 0 C~+85 C
H5TC4G83CFR-PBA FBGA-78 1.35V 1600 MBPS 0 C~+85 C