图片仅供参考
制造商IC编号 | K4B4G0846R-BFMA |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 512MX8 DDR3L |
脚位/封装 | FBGA-78 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | 0 C~+85 C |
速度 | 1866 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Power | Low, i-TCSR & PASR & DS |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT41K512M8DA-107 AIT:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4B4G0846R-BYMA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846R-BYMA000 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846R-BYMA0000 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 C ES:P | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 C:P | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 ES:P | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 ES:R | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 IT | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K512M8DA-107 IT : MICRON F | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |