图片仅供参考
制造商IC编号 | K4B4G1646B-HYKO |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 256MX16 DDR3L |
脚位/封装 | FBGA-96 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | 0 C~+85 C |
速度 | 1600 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 3rd Generation |
Power | Low VDD(1.35V) |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4B4G1646Q-HYK00MJ | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
K4B4G1646Q-HYK0T00 | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
K4B4G1646Q-HYKD | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
K4B4G1646Q-HYKO | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K256M16HA-107:E TR , MT41K | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K256M16HA-107G:E D9PZD | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K256M16HA-107I | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K256M16HA-125 | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K256M16HA-125 E | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
MT41K256M16HA-125 ES:E | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |