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制造商IC编号 | K4B4G1646D-BFMAT3V |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3 SDRAM |
IC代码 | 256MX16 DDR3 |
脚位/封装 | FBGA-96 |
外包装 | TAPE ON REEL |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | -40 C~+95 C |
速度 | 1866 MBPS |
标准包装数量 | 2000 |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Low, i-TCSR & PASR & DS |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B4G1646D-BFMAT3V | 10,000 | 索取报价 | |
K4B4G1646D-BFMAT3V | 8,400 | 索取报价 | |
K4B4G1646D-BFMAT3V | 100,000+ | 索取报价 | |
K4B4G1646D-BFMAT3V | 2,053 | 索取报价 | |
K4B4G1646D-BFMAT3V | 100,000+ | 索取报价 | |
K4B4G1646D-BFMAT3V | 100,000+ | 索取报价 | |
K4B4G1646D-BFMAT3V | 100,000+ | 索取报价 | |
K4B4G1646D-BFMAT3V | 100,000+ | IN 2Y | 索取报价 |
K4B4G1646D-BFMAT3V | 50,000 | 21+ | 索取报价 |
K4B4G1646D-BFMAT3V | 100,000+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT41K256M16TW-107:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107AATP | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
D2516ECMDXGJDI-R | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
D2516ECMDXGJDI-U | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
IS43TR16256AL-107MBA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256BL-107MBA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256BL-15HBLI-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256ECL-107NBA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
K4B4G1646D-BFMA | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
K4B4G1646D-BFMA03V | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K256M16HA-107 AIT ES:E | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K256M16HA-107 AIT:E | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |