图片仅供参考
| 制造商IC编号 | K4B4G1646D-BHMAT2V |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 256MX16 DDR3L |
| 脚位/封装 | FBGA-96 |
| 外包装 | TAPE ON REEL |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35V |
| 温度规格 | -40 C~+105 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | 2000 |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low, i-TCSR & PASR & DS |
| Generation | 5th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4B4G1646D-BFMAT3V | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| IS46TR16256AL-107MBLA2 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+105 C |
| IS46TR16256AL-107MBLA2-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+105 C |
| IS46TR16256ECL-107MB2LA25-BM | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+105 C |
| IS46TR16256ECL-107NB2LA2-BM | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+105 C |
| K4B4G1646D-BHMA | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| K4B4G1646D-BHMA02V | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| MT41000256M16TW-107 AAT:P | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16HA-107 AAT ES:E | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16HA-107 AAT:E | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16TVV-107 AAT:P | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |