图片仅供参考
制造商IC编号 | K4B4G1646D-BMH9 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3 SDRAM |
IC代码 | 256MX16 DDR3L |
脚位/封装 | FBGA-96 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | -40 C~+95 C |
速度 | 1333 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5TC4G63AFR-H9I | FBGA-96 | 1.35V | 1333 MBPS | -40 C~+95 C |
IS43TR16256AL-15HBLI-TR | BGA-96 | 1.35V/1.5V | 1333 MBPS | -40 C~+95 C |
MT41K256M16RE-15E IT ES:D | FBGA-96 | 1.35V | 1333 MBPS | -40 C~+95 C |
MT41K256M16RE-15E IT:D | FBGA-96 | 1.35V | 1333 MBPS | -40 C~+95 C |
MT41K256M16RE-15EIT | FBGA-96 | 1.35V | 1333 MBPS | -40 C~+95 C |
MT41K256M16RE15EITD | FBGA-96 | 1.35V | 1333 MBPS | -40 C~+95 C |