K4B4G1646E-BMMATEC
产品概述
图片仅供参考
| 制造商IC编号 | K4B4G1646E-BMMATEC |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 256MX16 DDR3 |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | -40 C~+95 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low VDD(1.35V) |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AS4C256M16D3LB-10BIN | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| AS4C256M16D3LB-10BINTR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63AFR-RDI | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63CFR-RDC/I | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63CFR-RDI | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63CFR-RDIR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63CFR-RDJ | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63CFR-RDJR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63EFR-RDI | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G63EFR-RDIR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |