图片仅供参考
| 制造商IC编号 | K4B8G1646D-MYMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 512MX16 DDR3L |
| 共通IC编号 | K4B8G1646D-MYMA000 |
| K4B8G1646D-MYMA0CV | |
| K4B8G1646D-MYMATCV |
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x16 |
| Density | 8Gb |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 5th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B8G1646D-MYMATCV | 0 | 索取报价 | |
| K4B8G1646D-MYMA | 130 | 18+ | 索取报价 |
| K4B8G1646D-MYMA | 5,000 | 2022+ | 索取报价 |
| K4B8G1646D-MYMA | 142 | 索取报价 | |
| K4B8G1646D-MYMA | 4,000 | 索取报价 | |
| K4B8G1646D-MYMA | 5,624 | 索取报价 | |
| K4B8G1646D-MYMA | 5,624 | 2018+ | 索取报价 |
| K4B8G1646D-MYMA | 10,000 | 索取报价 | |
| K4B8G1646D-MYMA | 20,000 | 100% NEW | 索取报价 |
| K4B8G1646D-MYMA | 1,992 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TC8G63CMR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512AL-107MB | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512AL-107MBL | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512AL-107MBL-TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512AL-107MBLC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512B-107MB | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512BL-107MB | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512BL-107MBL | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512BL-107MBL-TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16512S2DL-107MB | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |