K4E151612D-JL60
产品详情
| 脚位/封装 | SOJ-42 |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 60 NS |
| 标准包装数量 | |
| 标准外箱 | |
| Bit Organization | x16 |
| Generation | 5th Generation |
| Power | Low Power |
DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY51V16164BJC-6 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V16164BJC-60 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164B JC-60 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164BJC-6 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164BJC-60 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164CJC-6 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164CJC-60 | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164CJC-60 (1MX16/EDO/3. | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164CJC-60D | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |
| HY51V18164CJC-60DR | SOJ-42 | 3.3 V | 60 NS | 0 C~+85 C |