脚位/封装 | SOJ-42 |
外包装 | TRAY |
无铅/环保 | 含铅 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+85 C |
速度 | 50 NS |
标准包装数量 | |
标准外箱 | |
Bit Organization | x16 |
Generation | 5th Generation |
Power | Normal Power |
DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
IC41LV16100S-50KT | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100-50K | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100-50K-TR | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100-50KT | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100-50KX | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100-50KX-E005S | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100A-50K | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100B-50 | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100B-50K | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |
IS41LV16100B-50K-TR | SOJ-42 | 3.3 V | 50 NS | 0 C~+85 C |