图片仅供参考
制造商IC编号 | K4H510838G-HCCC |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR1 SDRAM |
IC代码 | 64MX8 DDR1 |
共通IC编号 | K4H510838G-HCCC000 |
K4H510838G-HCCCT00 | |
K4H510838G-HCCCT000 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 2.5 V |
温度规格 | 0 C~+85 C |
速度 | 200 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4H510838G-HCCC | 4,000 | 索取报价 | |
K4H510838G-HCCC | 110 | 1034+ | 索取报价 |
K4H510838G-HCCC | 12,500 | 索取报价 | |
K4H510838G-HCCC | 2,000 | 2010+ | 索取报价 |
K4H510838G-HCCC | 19,200 | 索取报价 | |
K4H510838G-HCCC | 0 | 索取报价 | |
K4H510838G-HCCC | 10,000 | 索取报价 | |
K4H510838G-HCCC | 10,000 | 索取报价 | |
K4H510838G-HCCC | 20,480 | 10+ | 索取报价 |
K4H510838G-HCCC000 | 960 | 2010+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
IS43R86400D-5B | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400D-5B-TR | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400D-5BL | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400D-5BL-TR | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400E-5BL | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400E-5BL-TR | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400F-5BL | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
IS43R86400F-5BL-TR | BGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838-HCCCT00 | FBGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838B-GCCC | FBGA-60 | 2.5 V | 200 MHZ | 0 C~+85 C |