图片仅供参考
制造商IC编号 | K4H510838JBCB0 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR1 SDRAM |
IC代码 | 64MX8 DDR1 |
脚位/封装 | TSOP2(66) |
外包装 | TRAY |
无铅/环保 | 含铅 |
电压(伏) | 2.5 V |
温度规格 | 0 C~+85 C |
速度 | 166 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4H510838JBCB0 | 5,500 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
IS43R86400D-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400D-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400D-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400E-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400E-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400E-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400F-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400F-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400F-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H5108383M-TCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |