图片仅供参考
制造商IC编号 | K4H511638B-GC/LA2/LB0/LB |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR1 SDRAM |
IC代码 | 32MX16 DDR1 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 含铅 |
电压(伏) | 2.5 V |
温度规格 | 0 C~+85 C |
速度 | 133 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 3rd Generation |
Power | Normal Power |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4H511638B-GC/LB0 FBGA60 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-GCB0 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-GLB0 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-ZCB0 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638B-ZLB0 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
K4H511638C-GCB0 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
MT46V32M16BN-5B/6/75/75E | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
MT46V32M16BN-5B/75/75E/75 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
MT46V32M16BN-75 | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |
MT46V32M16BN-75 ES | FBGA-60 | 2.5 V | 133 MHZ | 0 C~+85 C |