图片仅供参考
制造商IC编号 | K4H511638J-LCC |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR1 SDRAM |
IC代码 | 32MX16 DDR1 |
脚位/封装 | TSOP2(66) |
外包装 | |
无铅/环保 | 含铅 |
电压(伏) | 2.5 V |
温度规格 | 0 C~+85 C |
速度 | 200 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4H511638J-LCC | 0 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4H511638C-UCCCT | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638C-ULCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638CUCCC00 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638CUCCCT00 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638D-CCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638D-LCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638D-LCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638D-UC/LCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638D-UCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H511638D-UCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |