图片仅供参考
| 制造商IC编号 | K4H511638J-VCB3 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 32MX16 DDR1 |
| 脚位/封装 | FBGA |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 2.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 11th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| IS43R16320D-6B | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R16320E-6B | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R16320F-6B | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638F-HLB3 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638G-HLB3 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638G-LLB3 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638G/F-LCB3 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638HUCB3 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638J-BCB3 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638J-BCB300 | FBGA | 2.5 V | 166 MHZ | 0 C~+85 C |