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| 制造商IC编号 | K4M28323PH-BG75 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | SDRAM MOBILE |
| IC代码 | 4MX32 SD |
| 脚位/封装 | FBGA-90 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -25 C~+85 C |
| 速度 | 133 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 4M |
| Bit Organization | x32 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR & PASR & DS |
| Generation | 9th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4M28323PH-FG75 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PH-HG75 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PH-HG750 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PH-HG75000 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PH-HG750JR | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PH-HG90 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PH-HN75 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |
| K4M28323PHFG90 | FBGA-90 | 1.8 V | 133 MHZ | -25 C~+85 C |