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| 制造商IC编号 | K4S283233F-FN1L |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | SDRAM MOBILE |
| IC代码 | 4MX32 SD |
| 脚位/封装 | FBGA-90 |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.0V/3.3V |
| 温度规格 | -25 C~+85 C |
| 速度 | 100 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 4M |
| Bit Organization | x32 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 7th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4S283233F-FN1L | 1,918 | 2007+ | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4S283233E-DH1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DM1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DN1H | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DN1H000 | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DN1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233EHN1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233ESN1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233F-F1H | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233F-F1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233F-FC1H | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |