脚位/封装 | TSOP2(86) |
外包装 | TRAY |
无铅/环保 | 含铅 |
电压(伏) | 3.3 V |
温度规格 | -40 C~+85 C |
速度 | 166 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4S643232H-TI60 | 4,000 | 索取报价 | |
K4S643232H-TI60 | 100 | 4 | 索取报价 |
K4S643232H-TI60 | 2,102 | 2007+ | 索取报价 |
K4S643232H-TI60000 | 108 | 索取报价 | |
K4S643232H-TI60 | 20,000 | 2009+ | 索取报价 |
K4S643232H-TI60000 | 148 | 索取报价 | |
K4S643232H-TI60 | 1,000 | 索取报价 | |
K4S643232H-TI60 | 1,127 | 2004+ | 索取报价 |
K4S643232H-TI60000 | 480 | 索取报价 | |
K4S643232H-TI60 | 20,000 | 09+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
IS42S32200B-6TI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200B-6TI-TR | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200B-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200C1-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200E-6TLA1 | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200E-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200H-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200L-6TI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200L-6TLA1 | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200L-6TLA1-TR | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |