K4S643232H-TI70
产品详情
| 脚位/封装 | TSOP2(86) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 143 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4S643232H-TI70 | 6,918 | 索取报价 | |
| K4S643232H-TI70 | 200 | 4 | 索取报价 |
| K4S643232H-TI70 | 1,488 | 2006+ | 索取报价 |
| K4S643232H-TI70 | 7,000 | 2009+ | 索取报价 |
| K4S643232H-TI70 | 1,488 | 索取报价 | |
| K4S643232H-TI70 | 1,040 | 索取报价 | |
| K4S643232H-TI70 | 20,000 | 2009+ | 索取报价 |
| K4S643232H-TI70 | 7,000 | 索取报价 | |
| K4S643232H-TI70 | 20,000 | 09+ | 索取报价 |
| K4S643232H-TI70 | 20,000 | 2007+ | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY57V643220CLT7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V643220CT-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V643220DLPT-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V643220DLTP-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V643220DSTP-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V643220DTP-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V643220TC-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V653220BLTC-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V653220BLTC-7I-A | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
| HY57V653220BTC-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |