K4S643232HTC6
产品详情
| 脚位/封装 | TSOP2(86) |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4S643232H-TC60 | 1,897 | 索取报价 | |
| K4S643232H-TC60000 | 5,500 | 索取报价 | |
| K4S643232H-TC60 | 4,000 | 索取报价 | |
| K4S643232H-TC60 | 560 | 419 | 索取报价 |
| K4S643232H-TC60 | 2,670 | 索取报价 | |
| K4S643232H-TC60 | 186 | 06+ | 索取报价 |
| K4S643232H-TC60 | 39,000 | 索取报价 | |
| K4S643232H-TC60 | 65,400 | 2017 | 索取报价 |
| K4S643232H-TC60 | 17,740 | 2017 | 索取报价 |
| K4S643232H-TC60 | 12,500 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| IC42S32200-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200-6T 3.3V | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200-6T-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200-6TG | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200B6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-60T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-60TI | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-6TL | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |