脚位/封装 | TSOP2(86) |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+85 C |
速度 | 143 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4S643232E-TC7/L70 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC70 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC70 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC7000 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC70000 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC700000 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC70000SAM | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC700F0 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC70ORT | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232E-TC70T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |