K4T1G084QF-BCE6
产品概述
图片仅供参考
| 制造商IC编号 | K4T1G084QF-BCE6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 128MX8 DDR2 |
| 共通IC编号 | K4T1G084QF-BCE6000 |
| K4T1G084QF-BCE60CV | |
| K4T1G084QF-BCE6T | |
| K4T1G084QF-BCE6T00 | |
| K4T1G084QF-BCE6TCV |
产品详情
| 脚位/封装 | FBGA-60 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 7th Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4T1G084QF-BCE6 | 1,718 | 14+ | 索取报价 |
| K4T1G084QF-BCE6 | 24,000 | 索取报价 | |
| K4T1G084QF-BCE6000 | 6,500 | 索取报价 | |
| K4T1G084QF-BCE6 | 4,000 | 索取报价 | |
| K4T1G084QF-BCE6 | 23,643 | 14+ | 索取报价 |
| K4T1G084QF-BCE6 | 249 | 1343+ | 索取报价 |
| K4T1G084QF-BCE6 | 800 | 索取报价 | |
| K4T1G084QF-BCE6 | 1,280 | 11+ | 索取报价 |
| K4T1G084QF-BCE6 | 5,660 | 索取报价 | |
| K4T1G084QF-BCE6 | 0 | 13+ | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4T1G084QD-ZLE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QD/E-HCE60MJ/00 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QD/E/Q-HCE60MJ/00 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QD0-ZCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-BCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCE6/HCF7 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCE60 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCE600 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G084QE-HCE6000 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |