图片仅供参考
制造商IC编号 | K4T1G164QE-HCF7 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX16 DDR2 |
共通IC编号 | K4T1G164QE-HCF7000 |
K4T1G164QE-HCF7T00 | |
K4T1G164QE-HCF7T000 | |
K4T1G164QEHCF70 | |
K4T1G164QEHCF7T |
脚位/封装 | FBGA-84 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G164QE-HCF7 | 516 | 2013+ | 索取报价 |
K4T1G164QEHCF70 | 3,840 | 10+ | 索取报价 |
K4T1G164QE-HCF7 | 4,000 | 索取报价 | |
K4T1G164QE-HCF7 | 130 | 索取报价 | |
K4T1G164QE-HCF7 | 1,339 | 1110+ | 索取报价 |
K4T1G164QE-HCF7 | 2,640 | 1019+ | 索取报价 |
K4T1G164QE-HCF7 | 139 | 1134+ | 索取报价 |
K4T1G164QE-HCF7 | 4 | 201007 | 索取报价 |
K4T1G164QE-HCF7 | 12,500 | 索取报价 | |
K4T1G164QE-HCF7 | 11,350 | 16+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H64M16HR-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25 ES:E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25 ES:G | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25 ES:H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25:E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25:E TR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25:E/G | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25:F | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25:G | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16HR-25:G(BULK) | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |