图片仅供参考
制造商IC编号 | K4T1G164QQ-HCE6T00LEADFRE |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G164QQ-HCE6T00LEADFRE | 12,000 | 2009+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H64M16BT37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16H-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-25E-L #65306 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3 #65306 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3 ES:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3 L:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3/-25E:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-37:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |