图片仅供参考
制造商IC编号 | K4T51083QE-ZCE7/ZCF7 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX8 DDR2 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
IS43DR86400D -25DBL | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR86400E -25DB | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR86400E-25DBL | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QC-ZCE7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QC-ZCF7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QC-ZLE7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QC-ZLF7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QE-BCE7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QE-CF7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51083QE-HCF7 | FBGA-60 | 1.8 V | 800 MBPS | 0 C~+85 C |