图片仅供参考
制造商IC编号 | K4T51083QG-HCE6/HCE7 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX8 DDR2 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
IS43DR86400D-3DB | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR86400D-3DBL | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR86400E-3DB | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR86400E-3DBL | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T510830I-HCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T510838QEZCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T510838QEZCE60MJ | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T510838QG-HCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T51083QB-SCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T51083QB-ZCE6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |