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制造商IC编号 | K4T51083QG-HCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX8 DDR2 |
共通IC编号 | K4T51083QG-HCE6(T) |
K4T51083QG-HCE600 | |
K4T51083QG-HCE6000 | |
K4T51083QG-HCE6T00 | |
K4T51083QG-HCE6T000 | |
K4T51083QGHCE60 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51083QG-HCE6 | 4,000 | 索取报价 | |
K4T51083QG-HCE6 | 6,322 | 索取报价 | |
K4T51083QG-HCE6 | 14,080 | 0907+ | 索取报价 |
K4T51083QG-HCE6 | 14,080 | 0907 | 索取报价 |
K4T51083QG-HCE6 | 425 | 17+ | 索取报价 |
K4T51083QG-HCE6 | 1,000 | 17+ | 索取报价 |
K4T51083QG-HCE6 | 12,500 | 索取报价 | |
K4T51083QG-HCE6 | 180 | 索取报价 | |
K4T51083QG-HCE6 | 693 | 9 | 索取报价 |
K4T51083QG-HCE6 | 17,920 | 09NOPB | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
HY5PS12821 CFP-Y5-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821AF-Y4 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821AF-Y5 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821AFP-Y4 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821AFP-Y5 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821B-CFP-Y5-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821B/C/EFP-Y5- | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821B/C/EFP-Y5-T | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821B/CFP-Y5-T | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS12821B/CFP-Y5-T/-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |