K4T51163QC-GCD5000

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4T51163QC-GCD5000
厂牌 SAMSUNG/三星
IC 类别 DDR2 SDRAM
IC代码 32MX16 DDR2

产品详情

脚位/封装 FBGA-84
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.8 V
温度规格 0 C~+85 C
速度 533 MBPS
标准包装数量 1280
标准外箱
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 4th Generation
Power Normal Power

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
(HY5PS121621BPF-C4 FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621AF-C4 FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621AFP-C4 FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BFP-C4 FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BFP-C4 FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BFP-C4-C FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BFP-C4-T FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BFP-C4E FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BFPC4Y5 FBGA-84 1.8 V 533 MBPS 0 C~+85 C
HY5PS121621BLFP-C4 FBGA-84 1.8 V 533 MBPS 0 C~+85 C