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制造商IC编号 | K4T51163QG-HCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
共通IC编号 | K4T51163QG-HCE60 |
K4T51163QG-HCE600 | |
K4T51163QG-HCE600/T00 | |
K4T51163QG-HCE6000 | |
K4T51163QG-HCE60CV | |
K4T51163QG-HCE60T00 | |
K4T51163QG-HCE6: | |
K4T51163QG-HCE6T | |
K4T51163QG-HCE6T00 | |
K4T51163QG-HCE6T000 |
脚位/封装 | FBGA-84 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51163QG-HCE6 | 2,451 | 索取报价 | |
K4T51163QG-HCE60CV | 6,500 | 索取报价 | |
K4T51163QG-HCE6T00 | 4,000 | 索取报价 | |
K4T51163QG-HCE6 | 158 | 0928+ | 索取报价 |
K4T51163QG-HCE6 | 3,456 | 09+ | 索取报价 |
K4T51163QG-HCE6 | 2,852 | 09+ | 索取报价 |
K4T51163QG-HCE6 | 110 | 09+10+ | 索取报价 |
K4T51163QG-HCE6 | 2,698 | 索取报价 | |
K4T51163QG-HCE6 | 1,356 | 索取报价 | |
K4T51163QG-HCE6 | 32 | 200931 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H32M16NF-25E ES:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E-H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:H TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:H TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:M | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:M TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25TRE IT:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NR-25E :H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |