图片仅供参考
制造商IC编号 | K4T51163QJ-HCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51163QJ-HCE6 | 9,950 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H32M16HW-25:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E: G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25EF | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25EFTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-3 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |