图片仅供参考
制造商IC编号 | K4T51163QQ-BCE7TSG |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 17th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51163QQ-BCE7TSG | 80,000 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
HYB18T512161AF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512161B2F-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512161BF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512161BF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512161BF-25PBF | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512161CF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC512160AF5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC512160B2F-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC512160B2F-25F | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC512160B2F-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |