K4T51163QQ-BIE6
产品概述
图片仅供参考
| 制造商IC编号 | K4T51163QQ-BIE6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 32MX16 DDR2 |
| 共通IC编号 | K4T51163QQ-BIE6000 |
| K4T51163QQ-BIE6TCV |
产品详情
| 脚位/封装 | FBGA-84 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 17th Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4T51163QQ-BIE6TCV | 8,000 | 索取报价 | |
| K4T51163QQ-BIE6 | 2,560 | DC16 | 索取报价 |
| K4T51163QQ-BIE6000 | 10,000 | 10+ | 索取报价 |
| K4T51163QQ-BIE6000 | 10,000 | 14+ | 索取报价 |
| K4T51163QQ-BIE6000 | 7,000 | 索取报价 | |
| K4T51163QQ-BIE6000 | 1,706 | 索取报价 | |
| K4T51163QQ-BIE6000 | 2,666 | 索取报价 | |
| K4T51163QQ-BIE6000 | 5,546 | 索取报价 | |
| K4T51163QQ-BIE6000 | 746 | 索取报价 | |
| K4T51163QQ-BIE6000 | 2,766 | 索取报价 |
可替代IC编号
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT47H32M16HR-3 IT:G | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-3IT:F | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-3IT:FTR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM68B16CWQD-3IH | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CFP-Y4I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CLFP-Y4I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CLFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320B-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320B-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320B-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320C-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |