| 脚位/封装 |
TSOP2(44)
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
5.0 V
|
| 温度规格 |
-40 C~+85 C
|
| 速度 |
10 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
GENERAL DESCRIPTION
Fast Access Time 10ns(Max.) The K6R4008C1D is a 4,194,304-bit high-speed Static Random
Low Power Dissipation Access Memory organized as 524,288 words by 8 bits. The
Standby (TTL) : 20mA(Max.) K6R4008C1D uses 8 common input and output lines and has an
(CMOS) : 5mA(Max.) output enable pin which operates faster than address access
Operating K6R4008C1D-10 : 65mA(Max.) time at read cycle. The device is fabricated using SAMSUNG ′s
Single 5.0V±10 Power Supply advanced CMOS process and designed for high-speed circuit
TTL Compatible Inputs and Outputs technology. It is particularly well suited for use in high-density
Fully Static Operation high-speed system applications. The K6R4008C1D is packaged
- No Clock or Refresh required in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration
K6R4008C1D-J : 36-SOJ-400
K6R4008C1D-K : 36-SOJ-400(Lead-Free)
K6R4008C1D-T : 44-TSOP2-400BF
K6R4008C1D-U : 44-TSOP2-400BF(Lead-Free)
Operating in Commercial and Industrial Temperature range.
