| 脚位/封装 |
FBGA-63
|
| 外包装 |
TAPE ON REEL
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
2.7V-3.6V
|
| 温度规格 |
-40 C~+85 C
|
| 速度 |
42 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
64M
|
| Bit Organization |
x8
|
| Density |
512M
|
| Generation |
4th Generation
|
| Pre Prog Version |
None
|
| Classification |
SLC Normal
|
| Cust Bad Block |
Include Bad Block
|
| Mode |
Normal
|
GENERAL DESCRIPTION
Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. I ts
NAND cell provides the most cost-effective solutIon for thesolid state mass storage market. A program operation can be performed in
typical 200µs on the 528-bytes and an erase operation can be performed in ty pical 2ms on a 16K-bytes block. Data in the page can
be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write control automates all program and erase functi ons including pulse repetition, where required, and internal verifica-
tion and margining of data. Even the write-intens ive systems can take advantage of the K9F1208X0C ′s extended reliability of 100K
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
