图片仅供参考
制造商IC编号 | K9F1G08R0A-/B-JIB |
厂牌 | SAMSUNG/三星 |
IC 类别 | FLASH-NAND |
IC代码 | 128MX8 NAND SLC |
共通IC编号 | K9F1G08R0A/B-JIB0 |
脚位/封装 | FBGA-63 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | -40 C~+85 C |
速度 | 25 NS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Generation | 2nd Generation |
Pre Prog Version | Serial |
Classification | SLC Normal |
Mode | Normal |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT29F1G08ABBFAH4-ITE:F TR | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
MT29F1G08ABBFAH4-ITEES:F | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
MT29F1G08ABBHC-ET:B | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
MT29F1G08ABBHC-ETESB | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
MT29F1G08ABBHCETB | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58BYG0S3HBAI4 | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58BYG0S3HBAI4 TRAY | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58BYG0S3HBAI4JAH | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3EBAI4 | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3EBAI4 REEL | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |