图片仅供参考
| 制造商IC编号 | K9F1G08R0B-JIB |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | FLASH-NAND |
| IC代码 | 128MX8 NAND SLC |
| 共通IC编号 | K9F1G08R0B-JIB0 |
| K9F1G08R0B-JIB00 | |
| K9F1G08R0B-JIB0000 | |
| K9F1G08R0B-JIB0T |
| 脚位/封装 | FBGA-63 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.65V~1.95V |
| 温度规格 | -40 C~+85 C |
| 速度 | 25 NS |
| 标准包装数量 | 1280 |
| 标准外箱 |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K9F1G08R0B-JIB0 | 1,214 | 10+ | 索取报价 |
| K9F1G08R0B-JIB0 | 5,760 | 索取报价 | |
| K9F1G08R0B-JIB | 5,500 | 索取报价 | |
| K9F1G08R0B-JIB0 | 1,195 | 09+ | 索取报价 |
| K9F1G08R0B-JIB0 | 1,076 | 10+09+ | 索取报价 |
| K9F1G08R0B-JIB0 | 25,000 | 16+ | 索取报价 |
| K9F1G08R0B-JIB0 | 2,000 | 索取报价 | |
| K9F1G08R0B-JIB0 | 4,000 | 索取报价 | |
| K9F1G08R0B-JIB0 | 30,000 | 2017+ | 索取报价 |
| K9F1G08R0B-JIB0 | 12,500 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H27S1G8F2BFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2BFR-BI NBSP | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2BFR-BIR | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2CFE-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2CFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| IS35MW01G084-BLA1 | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| K9F1G08R08-JIBO | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |
| K9F1G08R0A-/B-JIB | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |
| K9F1G08R0A-JIB0000 | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |
| K9F1G08R0A/B-JIB0 | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |