K9F1G08U0D-HIB0
产品概述
图片仅供参考
| 制造商IC编号 | K9F1G08U0D-HIB0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | FLASH-NAND |
| IC代码 | 128MX8 NAND SLC |
产品详情
| 脚位/封装 | FBGA-63 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 2.7V~3.6V |
| 温度规格 | -40 C~+85 C |
| 速度 | 25 NS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Generation | 5th Generation |
| Pre Prog Version | None |
| Classification | SLC Normal |
| Cust Bad Block | Include Bad Block |
| Mode | Normal |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| S34ML01G200BHI000 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200BHI000 IC | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200BHI000/REV.01 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200BHI003 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200BHI500 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58BVG0S3HBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58BVG0S3HBAI4 KIOXIA | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58BVG0S3HBAI4 REEL | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58BVG0S3HBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58BVG0S3HBAI4-BDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |