K9F5608B0A-YCB0

GENERAL DESCRIPTION Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8capacity. The device is offered in 1.8V, 2.7V, 3.3tsVcc. I NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as comm and input. The on-chip write control automates all program and er ase functions including pulse repetition, where required, and in ternal verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

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