| 脚位/封装 |
TSOP-48
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
2.7V-3.6V
|
| 温度规格 |
0 C~+70 C
|
| 速度 |
50 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
32M
|
| Bit Organization |
x8
|
| Density |
256M
|
| Generation |
3rd Generation
|
| Pre Prog Version |
None
|
| Classification |
SLC Normal
|
| Cust Bad Block |
Include Bad Block
|
| Mode |
Normal
|
GENERAL DESCRIPTION
Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8capacity. The device is offered in 1.8V, 2.7V, 3.3tsVcc. I
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as comm and
input. The on-chip write control automates all program and er ase functions including pulse repetition, where required, and in ternal
verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
