K9K8G08U0A-PC

产品概述

IC Picture

图片仅供参考

制造商IC编号 K9K8G08U0A-PC
厂牌 SAMSUNG/三星
IC 类别 FLASH-NAND
IC代码 1GX8 NAND SLC

产品详情

脚位/封装 TSOP-48
外包装
无铅/环保 无铅/环保
电压(伏) 2.7V-3.6V
温度规格 0 C~+85 C
速度 25 NS
标准包装数量
标准外箱

GENERAL DESCRIPTION Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memo ry with spare 256M-bit. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.

供应链有货

IC 编号 数量 生产年份
K9K8G08U0A-PC 5,760 索取报价
K9K8G08U0A-PC 1,000 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
K9F8G08U0B-PCT0T00 TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9F8G08U0M-PCK0 TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9F8G08U0MPCK0T TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U01A-PCB0 TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U0A(B)-PCBO TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U0A-PCB TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U0A-PCB0 TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U0A-PCB0 TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U0A-PCB0 TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C
K9K8G08U0A-PCB0T TSOP-48 2.7V-3.6V 25 NS 0 C~+85 C