| 脚位/封装 |
TSOP-48
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
2.7V-3.6V
|
| 温度规格 |
-40 C~+85 C
|
| 速度 |
25 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
2G
|
| Bit Organization |
x8
|
| Density |
16G
|
| Generation |
2nd Generation
|
| Pre Prog Version |
None
|
| Classification |
SLC 4 Die Stack
|
| Cust Bad Block |
Include Bad Block
|
| Mode |
Dual nCE & Dual R/nB
|
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memo ry with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and
margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
