M29F002BT12CQ

产品概述

IC Picture

图片仅供参考

制造商IC编号 M29F002BT12CQ
厂牌 MICRON/美光
IC 类别 FLASH-NOR
IC代码 29F002 TOP

产品详情

脚位/封装
外包装
无铅/环保 含铅
电压(伏) 5.0 V
温度规格
速度
标准包装数量
标准外箱

SUMMARY DESCRIPTION The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B is fully backward compatible with the M29F002. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Tables 3A and 3B, Block Addresses. The first or last 64 Kbytes have been divided into four additional blocks.

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IC 编号 数量 生产年份
M29F002BT12CQ 15,377 0010+ 索取报价
M29F002BT12CQ 15,000 0010+ 索取报价
M29F002BT12CQ 25 2002+ 索取报价
M29F002BT12CQ 16,977 索取报价
M29F002BT12CQ 10,000 2002 索取报价
M29F002BT12CQ 10,225 2002+ 索取报价
M29F002BT12CQ 18,515 索取报价
M29F002BT12CQ 18,261 索取报价