| 脚位/封装 |
TSOP-48
|
| 外包装 |
|
| 无铅/环保 |
含铅
|
| 电压(伏) |
3.3 V
|
| 温度规格 |
-40 C~+85 C
|
| 速度 |
70 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
General Description
The M29W160ET/B (2Mb x8 or 1Mb x16) is a nonvolatile device that can be read, erased
and reprogrammed. These operations can be performed using a single low voltage (2.7–
3.6V) supply. On power-up the memory defaults to read mode where it can be read in
the same way as a ROM or EPROM.
The device is divided into blocks that can be erased independently to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and
ERASE commands are written to the command interface of the memory. An on-chip
program/erase controller simplifies the process of programming or erasing the memory
by taking care of all of the special operations that are required to update the memory
contents.
The end of a PROGRAM or ERASE operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged. The first or last 64KB have been
divided into four additional blocks. The 16KB boot block can be used for a small initialization code to start the microprocessor, the two 8 KB parameter blocks can be used for
parameter storage, and the remaining 32KB is a small main block where the application
may be stored.
CE#, OE#, and WE# signals control the bus operation. They enable simple connection to
most microprocessors, often without additional logic.
The device supplied with all the bits erased (set to 1).
