M29W200BT-55N1

产品概述

IC Picture

图片仅供参考

制造商IC编号 M29W200BT-55N1
厂牌 MICRON/美光
IC 类别 FLASH-NOR
IC代码 29LV200 TOP

产品详情

脚位/封装 TSOP-48
外包装
无铅/环保 含铅
电压(伏) 2.7V~3.6V
温度规格 0 C~+70 C
速度 55 NS
标准包装数量
标准外箱

SUMMARY DESCRIPTION The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

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IC 编号 数量 生产年份
M29W200BT-55N1 17,904 索取报价
M29W200BT-55N1 1,000 344 索取报价
M29W200BT-55N1 576 402 索取报价
M29W200BT-55N1 6,912 索取报价
M29W200BT-55N1 672 2003 索取报价
M29W200BT-55N1 100,000 2003 索取报价
M29W200BT-55N1 1,728 03+ 索取报价
M29W200BT-55N1 1,728 2003+ 索取报价
M29W200BT-55N1 15,000 2003+ 索取报价
M29W200BT-55N1 3,500 2002 索取报价