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制造商IC编号 | MT29F16G08ABCBBH1-12 |
厂牌 | MICRON/美光 |
IC 类别 | FLASH-NAND |
IC代码 | 2GX8 NAND SLC |
脚位/封装 | VBGA-100 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+70 C |
速度 | 166 MT/S |
标准包装数量 | |
标准外箱 | |
Number Of Words | 2G |
Bit Organization | x8 |
Density | 16G |
Production Status | Production |
Package Material | Pb-free |
Interface | Sync/Async |
Level | SLC |
Generation Feature Set | 2nd set of device features (rev only if different than 1st set) |
Speed Grade | 166 MT/s |
Package | VBGA(100-ball , 12 x 18 x 1.0) |
Classification | 1-1-1-1 (Die-nCE-RnB-IO Channels) |
General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT29F16G08ABCBBH1-12:B | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |
MT29F16G08ABCBBH1-12B | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |
MT29F16G08ABCBBH1-12ES:B | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |
MT29F16G08ABCBBH1-12P:B | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |
MT29F16G08ABCBBH1-12Q:B | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |
MT29F16G08ABCCBH1-12C | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |
MT29F16G08ABCCBH1-12ES:C | VBGA-100 | 3.3 V | 166 MT/S | 0 C~+70 C |