| 脚位/封装 |
FBGA-60
|
| 外包装 |
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
1.8 V
|
| 温度规格 |
0 C~+85 C
|
| 速度 |
166 MHZ
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
64M
|
| Bit Organization |
x16
|
| Density |
1G
|
| Production Status |
Production
|
| Package Material |
Lead Plating
|
| Product Family |
DDR SDRAM/Mobile LPDDR
|
| Version |
LF
|
General Description
The 1Gb Mobile low-power DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. It is internally configured as a quad-bank
DRAM. Each of the x16’s 268,435,456-bit banks is organized as 16,384 rows by 1024 columns by 16 bits. Each of the x32’s 268,435,456-bit banks is organized as 8192 rows by
1024 columns by 32 bits. In the reduced page-size (LG) option, each of the x32’s
268,435,456-bit banks are organized as 16,384 rows by 512 columns by 32 bits.
Note:
1. Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ should
be interpreted as any and all DQ collectively, unless specifically stated otherwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower
byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the upper byte
(DQ[15:8]), DM refers to UDM and DQS refers to UDQS. The x32 is divided into 4 bytes.
For DQ[7:0], DM refers to DM0 and DQS refers to DQS0. For DQ[15:8], DM refers to
DM1 and DQS refers to DQS1. For DQ[23:16], DM refers to DM2 and DQS refers to
DQS2. For DQ[31:24], DM refers to DM3 and DQS refers to DQS3.
2. Complete functionality is described throughout the document; any page or diagram
may have been simplified to convey a topic and may not be inclusive of all requirements.
3. Any specific requirement takes precedence over a general statement.
