| 脚位/封装 |
VFBGA-90
|
| 外包装 |
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
1.8 V
|
| 温度规格 |
0 C~+85 C
|
| 速度 |
166 MHZ
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
8M
|
| Bit Organization |
x32
|
| Density |
256M
|
| Max Clock Frequency |
200 MHz
|
| Production Status |
Production
|
| Product Family |
DDR SDRAM/Mobile LPDDR
|
| Version |
LF
|
General Description
The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access
memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.
Each of the x16’s 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16
bits. Each of the x32’s 67,108,864-bit banks is organized as 4,096 rows by 512 columns by
32 bits. In the reduced page-size option, each of the x32’s 67,108,864-bit banks is organized as 8,192 rows by 256 columns by 32 bits.
